EGaN Development Board Announced
EPC reveals development board for eGaN FETs
Aug 30, 2011
The EPC9005, used in conjunction with the firm’s enhancement-mode gallium nitride (eGaN) FETs, facilitates rapid design of high frequency switching power conversion systems based on the 40 V EPC2014.
Efficient Power Conversion Corporation (EPC) has revealed the EPC9005 development board which makes it easier for users to start designing with a 40 V eGaN field effect transistor (FET).
The company’s eGaN FETs are suited to applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.
The EPC9005 development board is a 40 V maximum device voltage, 7 A maximum output current, half bridge with on board gate drives, featuring the EPC2014 40 V eGaN FET. The purpose of this development board is to simplify the evaluation process of the EPC2014 eGaN FET by including all the critical components on a single board that can be easily connected into an existing converter.
The EPC9005 development board is 2” x 1.5” and contains not only two EPC2014 GaN FETs in a half bridge configuration with gate drivers, but also an on board gate drive supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.
EPC9005 development boards are priced at $95.00 each and are available for immediate delivery from Digi-Key.
- Source: http://www.compoundsemiconductor.net/csc/news-details/id/19733949/name/EPC-reveals-development-board-for-eGaN-FETs.html
The development board uses the EPC 1014 eGaN power FET.
- eGaN FET: http://epc-co.com/epc/Products/eGaNFETs/EPC1014.aspx (DigiKey.com)